sot223 pnp silicon planar medium power transistor issue 3 ? august 1995 j features * suitable for af drivers and output stages * high collector current and low v ce(sat) complementary type ? bcp54 partmarking details ? BCP51 BCP51 ? 10 BCP51 ? 16 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v peak pulse current i cm -1.5 a continuous collector current i c -1 a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo -45 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -45 v i c =- 10ma * emitter-base breakdown voltage v (br)ebo -5 v i e =-10 m a collector cut-off current i cbo -100 -10 na m a v cb =-30v v cb =-30v, t amb =150c emitter cut-off current i ebo -10 m a v eb =-5v collector-emitter saturation voltage v ce(sat) -0.5 v i c =-500ma, i b =-50ma* base-emitter turn-on voltage v be(on) -1.0 v i c =-500ma, v ce =-2v* static forward current transfer ratio h fe BCP51-10 BCP51-16 40 25 63 100 100 160 250 160 250 i c =-150ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-150ma, v ce =-2v* i c =-150ma, v ce =-2v* transition frequency f t 125 mhz i c =-50ma, v ce =-10v, f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% BCP51 c c e b 3 - 13 not recommended for new design please use fzt593
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